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| Ordering number : ENN7602 MCH3445 N-Channel Silicon MOSFET MCH3445 Ultrahigh-Speed Switching Applications Features * * * Package Dimensions unit : mm 2167A [MCH3445] 0.25 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.3 0.15 3 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 1 : Gate 2 : Source 3 : Drain 1 2 (Top view) 0.85 SANYO : MCPH3 Unit 20 12 2 8 0.8 150 --55 to +150 V V A A W C C Ratings Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V Ratings min 20 1 10 0.4 1.4 2.4 125 165 225 165 235 340 1.3 typ max Unit V A A V S m m m Marking : ZW Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1003 TS IM TA-100534 No.7602-1/4 MCH3445 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A VDS=10V, VGS=4V, ID=2A IS=2A, VGS=0 Ratings min typ 120 31 25 9 29 18 22 2.3 0.50 0.73 0.94 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 4V 0V VIN ID=1A RL=10 VOUT VDD=10V D PW=10s D.C.1% G P.G MCH3445 50 S 1.0 ID -- VDS 4.0V 2.5V 1.0 ID -- VGS VDS=10V 0.9 0.8 10V 1.8 V 0.8 Drain Current, ID -- A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Drain Current, ID -- A 1.5V 0.6 0.4 Ta=7 5C 0 0.2 0.4 0.6 0.8 1.0 0.2 VGS=1.0V 0.7 0.8 0.9 1.0 0 1.2 1.4 1.6 1.8 2.0 IT06289 400 Drain-to-Source Voltage, VDS -- V 400 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 25 C --25 C IT06290 RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 300 250 Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 300 250 200 150 100 50 0 --60 ID=0.1A 200 150 100 50 0 0 2 0.5A 1.0A .1A, I D=0 =1.8 VGS V V I D= =4.0V A, V GS I D=1.0 , VG 0.5A 2.5 S= 4 6 8 10 IT06352 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- C IT06353 No.7602-2/4 MCH3445 3 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IF -- VSD VGS=0 1.0 7 5 Ta= C 25 C --25 C 75 Forward Current, IF -- A Ta= 0.5 2 0.1 0.01 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 1000 7 5 1.0 IT06293 7 0.01 0.4 0.6 --25 C 0.7 0.8 3 75 25 C C 0.9 1.0 1.1 1.2 SW Time -- ID VDD=10V VGS=4V 1000 7 5 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT06294 Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT06295 Ciss, Coss, Crss -- pF 3 2 tf td(off) Ciss 100 7 5 3 2 td(on) tr Coss Crss 10 0 2 4 6 8 10 12 14 16 18 20 Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 VGS -- Qg Drain-to-Source Voltage, VDS -- V 2 10 7 5 IT06296 ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=2A IDP=8A ID=2A Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Operation in this area is limited by RDS(on). <10s 10 0 s 1m s 10 m s 10 DC 0m s op er ati on 2.5 IT06297 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Total Gate Charge, Qg -- nC 1.0 PD -- Ta Drain-to-Source Voltage, VDS -- V IT06354 Allowable Power Dissipation, PD -- W 0.8 M 0.6 ou nt ed on ac er am ic 0.4 bo ar d( 90 0m 0.2 m2 !0 .8m m ) 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT06355 No.7602-3/4 |
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